中束流离子注入机CI-S0500AS

主要用途：用于SiC电力电子器件制造、红外器件制造、 Si基器件制造等。通过向晶圆选择性注入掺杂元素如AI、B、N、P、As、 Be等，形成p-n结或调控器件性能参数。Main application: Focus on the manufacture of SiC power electronics devices, infrared devices and Si-based devices. By selectively implanting doped elements such as AI, B, N, P, As, Be, p-n junctions can be formed and device performance can be adjusted. 

主要特点Main Characteristics：

1、 单价离子最高能量最高至500keV，适用于高能离子注入工艺;Up to 500KeV energy for univalent ions, suitable for high energy ion implanting jobs;

2、 可配置专用坩埚Al离子源，维护周期大于350小时，用于SiC功率器件的Al离子注入工艺；With a selective specified crucible Al ion source, which makes PM intervals greater than 350h, it can be used for Al ion implanting jobs for SiC power electronics devices;

3、 可配置专用Be离子源，用于红外器件的Be离子注入工艺；With a selective specified Be ion source, it can be used in Be ion implanting jobs for infrared devices;

4、 可配置热蒸发离子源，用于As离子注入工艺；With a selective heat evaporation ion source, it can be used in As ion implanting jobs;

5、 适用于高温注入或常温注入，可配置高温加热靶或常温水冷靶，高温加热机械夹持靶台、高温静电吸盘、常温静电吸盘可选，最高加热温度超过600℃；Suitable for high-temperature or room-temperature implanting. It can be equipped with a high-temperature heating platen or a room-temperature water cooling platen. A high-temperature heating mechanical clamp, high-temperature E-chuck or room-temperature E-chuck is selective. The maximum heating temperature exceeds 600℃.

6、 配备束角度测量装置，注入角度控制精度高，束平行度优于0.2度。With a provided beam angle measure device, the implant angle is highly accurate, the parallelism is less than 0.2°

主要技术指标Main Parameters：