大束流离子注入机CI-S0200AS

主要用途：用于SiC电力电子器件制造，Si基器件制造。通过向晶圆选择性注入掺杂元素如AI、B、N、P等，形成p-n结或调控器件性能参数。Main application: Focus on the manufacture of SiC power electronics devices and Si-based devices. By selectively implanting doped elements such as AI, B, N, P, As, p-n junctions can be formed and device performance parameters can be adjusted. 

主要特点Main Characteristics：

1. 配置专用大束流Al离子源，维护周期大于300小时；Specified Al crucible ion source designed for high current applications, which makes PM intervals greater than 300h;  

2. 适用于高温注入或常温注入，可配置高温加热靶或常温水冷靶，高温加热机械夹持靶台、高温静电吸盘、常温静电吸盘可选，最高加热温度超过600℃；Suitable for high-temperature or room-temperature implanting. It can be equipped with a high-temperature heating platen or a room-temperature water cooling platen. A high-temperature heating mechanical clamp, high-temperature E-chuck or room-temperature E-chuck is selective. The maximum heating temperature can exceed 600℃.   

3. 配备束角度测量装置，注入角度控制精度高，束平行度优于0.2度；With a provided beam angle measure device, the implant angle is highly accurate, the parallelism is less than 0.2°.

4. 配置淋浴电子淋浴，降低晶圆表面静电积累；Using a selective PFG to reduce the electrostatics accumulation on the insulation layer of a wafer surface.

5. 可配置束流减速装置，最低注入能量低至5keV。With a selective beam decelerate devices, the minimum implant energy can reach 5KeV.

主要技术指标Main Parameters：