中束流离子注入机CI-S0380AS

主要用途：用于SiC电力电子器件制造，Si基器件制造。通过向晶圆选择性注入掺杂元素如AI、B、N、P等，形成p-n结或调控器件性能参数。Main application: Focus on the manufacture of SiC power electronics devices and Si-based devices. By selectively implanting doped elements such as AI, B, N, P, p-n junctions can be formed and device performance can be adjusted. 

主要特点Main Characteristics：

1. 可配置专用坩埚Al离子源，维护周期超过350小时，用于SiC功率器件的Al离子注入工艺；With a selective specified crucible Al ion source, which makes PM intervals greater than 350h , it can be used in Al ion implant jobs for SiC power electronics devices;

2. 适用于高温注入或常温注入，可配置高温加热靶或常温水冷靶，高温加热机械夹持靶台、高温静电吸盘、常温静电吸可选；最高加热温度超过600℃；Suitable for high-temperature implanting or room-temperature implanting. It can be equipped with a high-temperature heating platen or a room-temperature water cooling platen. A high-temperature heating mechanical clamp, high-temperature E-chuck or room-temperature E-chuck is selective. The maximum heating temperature exceeds 600℃.

3. 配备束角度测量装置，注入角度控制精度高，束平行度优于0.2度；With a provided beam angle measure device, the implant angle is highly accurate, the parallelism is less than 0.2°.

4. 可配置淋浴电子淋浴，降低晶圆表面绝缘层静电积累；With a selective PFG, reduce the electrostatics accumulation on the insulation layer of a wafer surface.

5. 可配置束流减速装置，最低注入能量低至5keV。With a selective beam decelerate device, the minimum implant energy can reach 5KeV.

主要技术指标Main Parameters：