半自动多用途离子注入机CI-S0380MS（0250MS）

主要用途：用于SiC电力电子器件制造，Si基器件制造及其他特种应用。通过向晶圆选择性注入掺杂元素如Al、B、N、P、H、As、Cu、Ag、Au、Er、Te等，形成p-n结或调控器件性能参数等。Main application: Focus on the manufacture of SiC power electronics devices and Si-based devices. By selectively implanting doped elements such as AI, B, N, P, H, As, Cu, Ag, Au, Er, Te, p-n junctions are formed and device performance parameters can be adjusted.

主要特点：Main Characteristics

1. 静电+机械扫描平行束注入；Electrostatic plus mechanical scan, and parallel beam implanting;

2. 采用手动装卸片，引束及注入自动运行，整机成本降低，适用于小批量生产或实验用途；Manually load and unload wafer, auto beam-tune and implant, the cost is reduced, suitable for small amount manufacture or lab use;

3. 靶室晶片装载支持定制化设计，4靶位，兼容4、6、8英寸，可同时支持高、低温配置、非标准晶片的装载；4 target platens that can provide customization of wafer chuck, compatible with 4 inch, 6inch and 8 inch wafer, allow high-temp and room-temp target platens at the same time, suitable for customised size wafer implant.

4. 可配置专用坩埚Al离子源，维护周期大于350小时，可用于SiC功率器件的Al离子注入工艺；With a selective specified crucible Al ion source, which makes PM intervals greater than 350h, it can be used in Al ion implant jobs for SiC power electronics devices;

5. 可配置专用离子源，适用于重金属离子等特种离子注入需求；With a selective specific ion source, it can be used in special ion implanting such as heavy metal;

6. 可配置高温加热靶，最高加热温度超过600℃；Selective high-temperature target platen, the max temperature is over 600℃;

主要技术指标Main Parameters：