旋转靶离子注入机 CI-S0200AB

主要用途：兼容H、He、B、P、As等多种离子，批式旋转靶注入，散热功率大，适用于大剂量注入工艺，如Si基功率器件、MEMS、Smart-cut材料剥离薄膜制备等。 Main application: Suitable for H, He, B, P, As implanting. Rotating batch disk implanting, which has efficient heat dissipation. Focus on high-dose implanting jobs, such as silicon-based power devices, MEMS, smart-cut material stripping and film-producing jobs.

主要特点Main Characteristics：

1、高速电扫描+低速旋转机械扫描，带来更优的颗粒污染水平，以及更低的晶圆局部温升；High speed electronic scan plus low speed mechanical rotation scan, which reduces particle pollution and decreases wafer temperature rise.

2、晶圆冷却能力强，可配置静电吸盘，束流功率5kW时8英寸晶圆低于80℃，红外测温可实时监控晶圆温度；High wafer-cooling ability. With selective E-chucks, wafer temperature during process is less than 80℃ when the beam power is 5kW, using a real-time infrared temperature measurement device can monitor wafer temperature;

3、可配置专用靶盘和电子淋浴，适用绝缘材料注入。With a selective specified target disk and PFG, it is suitable for insulation material implanting jobs.

主要技术指标Main Parameter

离子能量（Energy）	20-200keV(单电荷Sinlge Charge)
晶片尺寸（Wafer Size）	6 inch，8 inch
剂量注入范围（Dose Range）	1E13 - 1E17 ions/cm²
产品应用（Applications）	Si基功率器件、MEMS、Smart-cut材料剥离等大剂量离子注入工艺； Silicon-based power devices, MEMS, smart-cut material stripping and other high dose implanting jobs.

中束流离子注入机CI P900

中束流离子注入机CI A900XP

中束流高温离子注入机CI P900 HT

中束流MRK离子注入机 CI P900MRK

中束流碳化硅离子注入机CI P900SiC

新一代低能大束流离子注入机CI C60XP

产品与方案

旋转靶离子注入机 CI-S0200AB

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技术支持